Effects of an intense, high-frequency laser field on bound states in Ga1 − xInxNyAs1 − y/GaAs double quantum well

نویسندگان

  • Fatih Ungan
  • Unal Yesilgul
  • Serpil Şakiroğlu
  • Esin Kasapoglu
  • Ayse Erol
  • Mehmet Cetin Arikan
  • Huseyin Sarı
  • Ismail Sökmen
چکیده

Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 - xNyAs1 - y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.

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عنوان ژورنال:

دوره 7  شماره 

صفحات  -

تاریخ انتشار 2012